![Multigate Transistors for High Frequency Applications](/uploads/posts/2023-03/1680225483_8661_multigat__transistors_for_high_fr_qu_ncy_applications.jpg)
Автор: K. Sivasankaran, Partha Sharathi Mallick
Издательство: Springer
Год: 2023
Страниц: 98
Язык: английский
Формат: pdf (true), epub
Размер: 21.5 MB
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry. The transistor is one of the most important inventions in history which changed the world. The world is moving toward reducing the size of transistors to accommodate more in number, lesser power consumption, smaller delay, better performance, and reliability. However, the downscaling of conventional planar metal-oxide-semiconductor field-effect transistors (MOSFETs) is creating many problems such as the increase in leakage currents and short channel effects (SCEs). Most of the problems due to short channel effects and leakage currents in MOSFETs can be solved by improving the controllability of the gate.