Название: Power Electronics Semiconductor Devices
Автор: Robert Perret
Издательство: Wiley-ISTE
Год: 2009
Страниц: 559
ISBN: 9781848210646, 9780470611494
Формат: PDF
Размер: 11 Мб
Язык: English
This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations.
Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Content:
Chapter 1 Power MOSFET Transistors (pages 1–56): Pierre Aloisi
Chapter 2 Insulated Gate Bipolar Transistors (pages 57–132): Pierre Aloisi
Chapter 3 Series and Parallel Connections of MOS and IGBT (pages 133–183): Daniel Chatroux, Dominique Lafore and Jean?Luc Schanen
Chapter 4 Silicon Carbide Applications in Power Electronics (pages 185–265): Marie?Laure Locatelli and Dominique Planson
Chapter 5 Capacitors for Power Electronics (pages 267–315): Abderrahmane Beroual, Sophie Guillemet?Fritsch and Thierry Lebey
Chapter 6 Modeling Connections (pages 317–401): Edith Clavel, Francois Costa, Arnaud Guena, Cyrille Gautier, James Roudet and Jean?Luc Schanen
Chapter 7 Commutation Cell (pages 403–432): James Roudet and Jean?Luc Schanen
Chapter 8 Power Electronics and Thermal Management (pages 433–496): Corinne Perret and Robert Perret
Chapter 9 Towards Integrated Power Electronics (pages 497–545): Patrick Austin, Marie Breil and Jean?Louis Sanchez
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